Technology backgrounder: Immersion Lithography
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چکیده
The growth of the semiconductor industry is driven by Moore’s law: “The complexity for minimum component cost has increased at a rate of roughly a factor of two per year” [1]. Notice that Moore observed that not only was the number of components doubling yearly, but was doing so at minimum cost. One of the main factors driving the improvements in complexity and cost of ICs, is improvements in photolithography and the resulting ability to print ever smaller features. Recently optical lithography, the backbone of the industry for 45 years has been pushing up against a number of physical barriers that have led to massive investments in development of alternate techniques such as Scalpel, Extreme Ultraviolet and others. Since the mid eighties, the demise of optical lithography has been predicted as being only a few years away, but each time optical lithography approaches a limit, some new technique pushes out the useful life of the technology. The recent interest in immersion lithography offers the potential for optical lithography to be given a reprieve to beyond the end of the decade.
منابع مشابه
Three-dimensional imaging of 30-nm nanospheres using immersion interferometric lithography
Immersion interferometric lithography has been applied successfully to semiconductor device applications, but its potential is not limited to this application only. This paper explores this imaging technology for the production of threedimensional nano-structures using a 193 nm excimer laser and immersion Talbot interferometric lithographic tool. The fabrication of 3-D photonic crystals for the...
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Liquid immersion lithography (LIL) extends the resolution of optical lithography to meet industry demands into the next decade. Through the use of exposure media such as purified water (n of 1.44 at 193 nm), it is possible to reduce minimum pitches compared with traditional air/vacuum exposures media by a factor of as much as 44%—a full technology node. Beyond this simple observation, there is ...
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